Not Recommended for New Designs
SCS302AJ
650V, 2.15A, SMD, High Surge Resistance, Silicon-carbide (SiC) SBD
SCS302AJ
Not Recommended for New Designs
SCS302AJ
650V, 2.15A, SMD, High Surge Resistance, Silicon-carbide (SiC) SBD
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Part Number | SCS302AJTLL
Status |
Not Recommended for New Designs
Package |
LPTL
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS |
Yes
Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
2.15
Generation
3rd Gen
Total Power Dissipation[W]
24
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
Features:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
- Low leakage current
Videos & Catalogs
Videos
Wide Creepage Distance Package SiC Schottky Barrier Diodes - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.09 MB )
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.