SCS212AM
SiC SBD
SCS212AM
SiC SBD
Switching loss reduced, enabling high-speed switching . (2-pin package)
Product Detail
Specifications:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
12
Generation
2nd Gen
Total Power Dissipation[W]
37
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x19.1 (t=4.8)
Features:
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
Reference Design / Application Evaluation Kit
-
- Reference Design - REFPDT007
- 5kW High-Efficiency Fan-less Inverter
We employ trans-linked interleaved circuits as inverter circuits that utilize the high frequency switching performance of silicon carbide (SiC) MOSFET, achieving a power conversion efficiency of 99% or more at 5kW.Since this circuit topology allows a reduction in the inductance of the smoothing reactor, the high efficiency is achieved by reducing the number of windings of the reactor to dramatically reduce the copper loss. These novel inverter circuits have been developed jointly with Power Assist Technology Ltd. (https://www.power-assist-tech.co.jp/)
This reference design consists of three boards. Each is shown below.
- REFPDT007-EVK-001A Power Stage
- REFPDT007-EVK-001B Controller Board
- REFPDT007-EVK-001C Aux Power Supply
Since the interleaved type using SiC MOSFET (SCT3017AL, SCT3030AL) has an efficiency of 99.0% (total loss 51 W),heat generation is reduced, and the circuit can be cooled with downsized heat radiation fins without using a cooling fan.Furthermore, since the apparent switching frequency is doubled for the interleaved type, the smoothing filter is downsized by a factor of 2 in its size and weight.
