ROHM Product Detail

S6602

1200V, 10A, Silicon-carbide (SiC) SBD Bare Die
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S6602

S6602
1200V, 10A, Silicon-carbide (SiC) SBD Bare Die

S6602 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | S6602
Status | Active
Package |
Unit Quantity | 0
Minimum Package Quantity | 0
RoHS | Yes

Specifications:

Reverse Voltage[V]

1200

Continuous Forward Current[A]

10

Generation

3rd Gen

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

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Features:

  • Low forward voltage
  • Negligible recovery time/current
  • Temperature independent switching behavior
  • High surge current capability
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