BSM600D12P4G103

1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
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BSM600D12P4G103

BSM600D12P4G103
1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | BSM600D12P4G103
Status | Recommended
Package | G
Packing Type | Corrugated Cardboard
Unit Quantity | 4
Minimum Package Quantity | 4
RoHS | Yes
Product Longevity Program | 10 Years

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

567

Total Power Dissipation[W]

1780

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152x62 (t=18)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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