ROHM Product Detail

BSM600D12P4G103

1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
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BSM600D12P4G103

BSM600D12P4G103
1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | BSM600D12P4G103
Status | Recommended
Package | G Type
Packing Type | Corrugated Cardboard
Unit Quantity | 4
Minimum Package Quantity | 4
RoHS | Yes
Product Longevity Program | 9 Years

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

567

Total Power Dissipation[W]

1780

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-Bridge

Package Size [mm]

152.0x62.0 (t=18.0)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Reference Design - REF69001
    • Half-Bridge Drive for SiC Case Module

    • In power distribution applications including renewable energy, which handles large amounts of power, the use of SiC is accelerating in order to improve efficiency, miniaturize, and lighten the design. SiC, which has higher-speed and higher-efficiency characteristics compared to conventional IGBTs, presents challenges in design, such as gate drive and short-circuit protection, leading to increased design effort. The gate drive board for SiC case modules developed by TAMURA Corporation is matched in gate voltage, gate resistance, and short-circuit characteristics for 4th generation SiC modules, enabling users to begin evaluation easily and perform highly reliable testing. Furthermore, this board is suitable for mass production and can be directly integrated into mass production equipment, thus contributing to a reduction in design effort and cost reduction.

      For details on the board and customization options, please contact below.
      https://www.tamuracorp.com/global/products/gate-drivers/powermodule/detail/rohm.html

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