BSM400D12P3G002
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
BSM400D12P3G002
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
358
Total Power Dissipation[W]
1570
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
152.0x62.0 (t=18.0)
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
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- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
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- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
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