ROHM Product Detail

BSM400D12P3G002

1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
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BSM400D12P3G002

BSM400D12P3G002
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | BSM400D12P3G002
Status | Recommended
Package | G Type
Packing Type | Corrugated Cardboard
Unit Quantity | 4
Minimum Package Quantity | 4
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

358

Total Power Dissipation[W]

1570

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

152.0x62.0 (t=18.0)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
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