ROHM Product Detail

BSM300D12P4G101

1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
Data Sheet Buy *
BSM300D12P4G101

BSM300D12P4G101
1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM300D12P4G101 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy * Sample *

Product Detail

 
Part Number | BSM300D12P4G101
Status | Recommended
Package | G Type
Packing Type | Corrugated Cardboard
Unit Quantity | 4
Minimum Package Quantity | 4
RoHS | Yes
Product Longevity Program | 10 Years

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

291

Total Power Dissipation[W]

925

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

152.0x62.0 (t=18.0)

Find Similar

Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

X

Most Viewed