ROHM Product Detail

BSM300D12P3E005
1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | BSM300D12P3E005
Status | Recommended
Package | E
Packing Type | Corrugated Cardboard
Unit Quantity | 4
Minimum Package Quantity | 4
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1260

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package Size [mm]

152x57.95 (t=18)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001
    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide
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