Silicon carbide Power Module - BSM300D12P2E001 | ROHM Semiconductor - ROHM Co., Ltd. - global
Rohm Productdetail
Silicon carbide Power Module - BSM300D12P2E001
BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.
×
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
300.0
Total Power Dissipation[W]
1875
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.