BSM300D12P2E001
1200V, 300A, Half bridge, Silicon-carbide (SiC) Power Module
BSM300D12P2E001
1200V, 300A, Half bridge, Silicon-carbide (SiC) Power Module
BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
300
Total Power Dissipation[W]
1875
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x57.95 (t=18)
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Evaluation
Board
-
- Drive Board
- AgileSwitch 2ASC-12A1HP / EDCA1
For BSM series (1200V, E / G type)
Core Driver : 2ASC-12A1HP
Adapter Board : EDCA1
-
- Drive Board
- BSMGD2G12D24-EVK001
This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module
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- Snubber Module
- MGSM1D72J2-145MH16
BSM series (1200V, E / G type)
-
- Drive Board
- TAMURA 2DU series
For BSM series (1200V, C / E / G type)
