BSM250D17P2E004
1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module
Not Recommended for New Designs
BSM250D17P2E004
1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Specifications:
Drain-source Voltage[V]
1700
Drain Current[A]
250
Total Power Dissipation[W]
1800
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-Bridge
Package Size [mm]
152.0x62.0 (t=18.0)
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD2G17D24-EVK001
This evaluation board, BSMGD2G17D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation 1700V SiC-MOSFET in E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J3-934MH93
Snubber Module for BSM250 (1700V,E type)
-
- Drive Board - TAMURA 2DUB series
Drive Board for BSM series (1700V, E type)
