Silicon Carbide Power Module - BSM250D17P2E004 | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
Silicon Carbide Power Module - BSM250D17P2E004 (New)
BSM250D17P2E004 is a half bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
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Specifications:
Drain-source Voltage[V]
1700
Drain Current[A]
250.0
Total Power Dissipation[W]
1800
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.