Silicon carbide Power Module - BSM120D12P2C005 | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
Silicon carbide Power Module - BSM120D12P2C005
Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.
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Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
134.0
Total Power Dissipation[W]
935
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Features:
・Full SiC power module with SiC MOSFET and SiC SBD・High-speed switching and low switching loss
・Ensured reliability of body diode conduction