ROHM Product Detail

BSM120D12P2C005

1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
Data Sheet Buy *
BSM120D12P2C005

BSM120D12P2C005
1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy * Sample *

Product Detail

 
Part Number | BSM120D12P2C005
Status | Recommended
Package | C Type
Packing Type | Corrugated Cardboard
Unit Quantity | 12
Minimum Package Quantity | 12
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

134

Total Power Dissipation[W]

935

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

122.0x45.6 (t=17.5)

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Features:

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
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