BSM120D12P2C005
1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
BSM120D12P2C005
1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module
Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
134
Total Power Dissipation[W]
935
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
122x45.6 (t=17.5)
Features:
・Full SiC power module with SiC MOSFET and SiC SBD・High-speed switching and low switching loss
・Ensured reliability of body diode conduction
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3C12D24-EVK001
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH26
Snubber Module for BSM series (1200V, C type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
