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Silicon carbide Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | BSM120D12P2C005
Status | Active
Package | C
Unit Quantity | 12
Minimum Package Quantity | 12
Packing Type | Tray
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

134.0

Total Power Dissipation[W]

935

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Features:

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction