SCT4062KEHR
1200V, 26A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT4062KEHR
1200V, 26A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
AEC-Q101 qualified automotive grade product. SCT4062KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
62
Generation
4th Gen (Trench)
Drain Current[A]
26
Total Power Dissipation[W]
115
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
