1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

Part Number | SCT3105KLGC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]


Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

16x21 (t=5.2)


・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant

Design Resources



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