SCT3080KW7
1200V 30A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3080KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

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Product Detail

 
Part Number | SCT3080KW7TL
Status | Recommended
Package | TO-263-7L
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80

Generation

3rd Gen (Trench)

Drain Current[A]

30

Total Power Dissipation[W]

159

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

Find Similar

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
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