1200V 30A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080KW7 (New)

SCT3080KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

* This is a standard-grade product.
For Automotive usage, please contact Sales.
Part Number | SCT3080KW7TL
Status | Recommended
Package | TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

80.0

Drain Current[A]

30.0

Total Power Dissipation[W]

159

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant