1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080KR (New)

SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. This new series adopts a 4-pin package that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

* This is a standard-grade product.
For Automotive usage, please contact Sales.


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