1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080KR (New)

SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. This new series adopts a 4-pin package that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

* This is a standard-grade product.
For Automotive usage, please contact Sales.

Package Information

TO-247-4L Dimensions
 
for TO-247-4L
TO-247-4L Inner Structure
 
for TO-247-4L
TO-247-4L Taping Information
 
for TO-247-4L
Moisture Sensitivity Level
 
For SiC
Anti-Whisker formation
 
For SiC

Environmental Data

About Flammability of Materials
 
For SiC
Compliance of the ELV directive
 
For SiC
About Non-use SVHC under Reach Regulation
 
For SiC

Export Information

About Export Administration Regulations (EAR)
 
For SiC