1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080KR (New)
SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).
A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Drain-source On-state Resistance(Typ.)[mΩ]
Total Power Dissipation[W]
Storage Temperature (Min.)[℃]
Storage Temperature (Max.)[℃]
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating; RoHS compliant
- High efficiency 4pin package
- Evaluation board 'P02SCT3040KR-EVK-001'