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N-channel Silicon Carbide Power MOSFET - SCT3080AL

650V 30A N-channel SiC (Silicon Carbide) power MOSFET.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | SCT3080ALGC11
Status | Active
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

80.0

Drain Current[A]

30.0

Total Power Dissipation[W]

134

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant