SCT3080AL
650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AL
SCT3080AL
650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
650V 30A N-channel SiC (Silicon Carbide) power MOSFET.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | SCT3080ALGC11
Status |
Recommended
Package |
TO-247N
Packing Type | Tube
Unit Quantity | 450
Minimum Package Quantity | 30
RoHS |
Yes
Product Longevity Program |
10 Years
Specifications:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen (Trench)
Drain Current[A]
30
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
