SCT3060AW7 (New)
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

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Product Detail

 
Part Number | SCT3060AW7TL
Status | Recommended
Package | TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

60.0

Drain Current[A]

38.0

Total Power Dissipation[W]

159

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Design Resources

 

Documents

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Application Note

  • Improvement of switching loss by driver source

Technical Articles

Schematic Design & Verification

  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Application Note for SiC Power Devices and Modules
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Tools

Models

  • SCT3060AW7 SPICE Model

Packaging & Quality

Package Information

  • TO-263-7L Package Dimensions
  • TO-263-7L Inner Structure
  • TO-263-7L Taping Information
  • TO-263-7L Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)