ROHM Product Detail

SCT3060AW7
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | SCT3060AW7TL
Status | Recommended
Package | TO-263-7L
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS | Yes

Specifications:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

60

Generation

3rd Gen (Trench)

Drain Current[A]

38

Total Power Dissipation[W]

159

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

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