650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3030AL

SCT3030AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

* This is a standard-grade product.
For Automotive usage, please contact Sales.
Part Number | SCT3030ALGC11
Status | Recommended
Package | TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS | Yes

Specifications:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

30.0

Drain Current[A]

70.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[℃]

175

Storage Temperature (Min.)[℃]

-55

Storage Temperature (Max.)[℃]

175

Features:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant