ROHM Product Detail

SCT3030AL
650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3030AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | SCT3030ALGC11
Status | Recommended
Package | TO-247N
Packing Type | Tube
Unit Quantity | 450
Minimum Package Quantity | 30
RoHS | Yes
Product Longevity Program | 10 Years

Specifications:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

30

Generation

3rd Gen (Trench)

Drain Current[A]

70

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Find Similar

Features:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant

Similar Products

 

Different Grade

SCT3030ALHR   Grade| Automotive StatusRecommended

Reference Design / Application Evaluation Kit

 
    • Reference Design - REFPDT007
    • 5kW High-Efficiency Fan-less Inverter
    • We employ trans-linked interleaved circuits as inverter circuits that utilize the high frequency switching performance of silicon carbide (SiC) MOSFET, achieving a power conversion efficiency of 99% or more at 5kW.Since this circuit topology allows a reduction in the inductance of the smoothing reactor, the high efficiency is achieved by reducing the number of windings of the reactor to dramatically reduce the copper loss. These novel inverter circuits have been developed jointly with Power Assist Technology Ltd. (https://www.power-assist-tech.co.jp/)


      This reference design consists of three boards. Each is shown below.

      • REFPDT007-EVK-001A Power Stage
      • REFPDT007-EVK-001B Controller Board
      • REFPDT007-EVK-001C Aux Power Supply

      Since the interleaved type using SiC MOSFET (SCT3017AL, SCT3030AL) has an efficiency of 99.0% (total loss 51 W),heat generation is reduced, and the circuit can be cooled with downsized heat radiation fins without using a cooling fan.Furthermore, since the apparent switching frequency is doubled for the interleaved type, the smoothing filter is downsized by a factor of 2 in its size and weight.

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