1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT4036KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

Part Number | SCT4036KW7TL
Status | Recommended
Package | TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]



4th Gen (Trench)

Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

10.2x15.4 (t=4.7)

Find Similar


  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Reference Design / Application Evaluation Kit

    • Evaluation Board - HB2637L-EVK-301
    • The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

  • User Guide

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