S4107

1200V, 24A, Silicon-carbide (SiC) MOSFET Bare Die
Data Sheet
S4107

S4107
1200V, 24A, Silicon-carbide (SiC) MOSFET Bare Die

S4107 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

Data Sheet
* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet

Product Detail

 
Part Number | S4107
Status | Active
Package |
Unit Quantity |
Minimum Package Quantity |
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

105

Generation

3rd Gen

Drain Current[A]

24

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Find Similar

Features:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
X

Most Viewed