N-channel Silicon Carbide Power MOSFET bare die - S4102 | ROHM Semiconductor - ROHM Co., Ltd.
N-channel Silicon Carbide Power MOSFET bare die - S4102
S4102 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage withstand capability, low ON-state resistance, and fast switching speed.
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Drain-source On-state Resistance(Typ.)[mO]
Storage Temperature (Min.)[°C]
Storage Temperature (Max.)[°C]
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive