US5U35
4V Drive Pch+SBD MOSFET
US5U35
4V Drive Pch+SBD MOSFET
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-353T
JEITA Package
SC-113CA
Number of terminal
5
Polarity
Pch+Schottky
Drain-Source Voltage VDSS[V]
-45
Drain Current ID[A]
-0.7
RDS(on)[Ω] VGS=4V(Typ)
1
RDS(on)[Ω] VGS=4.5V(Typ)
0.9
RDS(on)[Ω] VGS=10V(Typ)
0.6
RDS(on)[Ω] VGS=Drive (Typ)
1
Total gate charge Qg[nC]
1.7
Power Dissipation (PD)[W]
0.7
Drive Voltage[V]
-4
Reverse voltage VR (Diode) [V]
40
Forward Current IF (Diode) [A]
0.1
Forward Current Surge Peak IFSM (Diode) [A]
1
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.1x2.0 (t=0.82)
Features:
· Multiple Schottky Barrier Diodes Middle Power MOSFET· Small Surface Mount Package
· Pb Free/RoHS Compliant
