US5U2
4V Drive Nch+SBD MOSFET
US5U2
4V Drive Nch+SBD MOSFET
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-353T
JEITA Package
SC-113CA
Number of terminal
5
Polarity
Nch+Schottky
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
1.4
RDS(on)[Ω] VGS=4V(Typ)
0.27
RDS(on)[Ω] VGS=4.5V(Typ)
0.25
RDS(on)[Ω] VGS=10V(Typ)
0.17
RDS(on)[Ω] VGS=Drive (Typ)
0.27
Total gate charge Qg[nC]
1.4
Power Dissipation (PD)[W]
0.7
Drive Voltage[V]
4
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
0.5
Forward Current Surge Peak IFSM (Diode) [A]
2
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.0x2.1 (t=0.82)
Features:
· Multiple Schottky Barrier Diodes Middle Power MOSFET· Small Surface Mount Package
· Pb Free/RoHS Compliant
