QS8K21
4V Drive Nch+Nch MOSFET
QS8K21
4V Drive Nch+Nch MOSFET
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. Newly developed backside heat dissipation package lineup, dual MOSFET ideal for motor drive.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
TSMT8
Number of terminal
8
Polarity
Nch+Nch
Drain-Source Voltage VDSS[V]
45
Drain Current ID[A]
4
RDS(on)[Ω] VGS=4V(Typ)
0.053
RDS(on)[Ω] VGS=4.5V(Typ)
0.048
RDS(on)[Ω] VGS=10V(Typ)
0.038
RDS(on)[Ω] VGS=Drive (Typ)
0.053
Total gate charge Qg[nC]
5.4
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.0x2.8 (t=0.85)
Features:
· 4Ｖ-drive type· Nch+Nch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
