Models
- QS8J2 SPICE Model
- QS8J2 Thermal Model (lib)
Characteristics Data
- ESD Data
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Grade
Standard
Package Code
TSMT8
Package Size[mm]
3.0x2.8 (t=0.8)
Applications
Power Supply
Number of terminal
8
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-12
Drain Current ID[A]
-4.0
RDS(on)[Ω] VGS=1.5V(Typ.)
0.066
RDS(on)[Ω] VGS=2.5V(Typ.)
0.036
RDS(on)[Ω] VGS=4.5V(Typ.)
0.026
RDS(on)[Ω] VGS=Drive (Typ.)
0.066
Total gate charge Qg[nC]
20.0
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
-1.5
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150