QS5U34
1.8V Drive Nch+SBD MOSFET
QS5U34
1.8V Drive Nch+SBD MOSFET
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-25T
Number of terminal
5
Polarity
Nch+Schottky
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.8V(Typ)
0.22
RDS(on)[Ω] VGS=2.5V(Typ)
0.17
RDS(on)[Ω] VGS=4.5V(Typ)
0.13
RDS(on)[Ω] VGS=Drive (Typ)
0.22
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
0.9
Drive Voltage[V]
1.8
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
0.5
Forward Current Surge Peak IFSM (Diode) [A]
2
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.8x2.9 (t=1.0)
Features:
· Multiple Schottky Barrier Diodes Middle Power MOSFET· Small Surface Mount Package
· Pb Free/RoHS Compliant
