EM6J1
1.2V Drive Pch+Pch MOSFET

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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Product Detail

 
Part Number | EM6J1T2R
Status | Active
Package | EMT6
Packing Type | Taping
Unit Quantity | 8000
Minimum Package Quantity | 8000
RoHS | Yes

Specifications:

Package Code

SOT-563

JEITA Package

SC-107C

Number of terminal

6

Polarity

Pch+Pch

Drain-Source Voltage VDSS[V]

-20

Drain Current ID[A]

-0.2

RDS(on)[Ω] VGS=1.2V(Typ)

2.4

RDS(on)[Ω] VGS=1.5V(Typ)

1.6

RDS(on)[Ω] VGS=2.5V(Typ)

1

RDS(on)[Ω] VGS=4.5V(Typ)

0.8

RDS(on)[Ω] VGS=Drive (Typ)

2.4

Total gate charge Qg[nC]

1.4

Power Dissipation (PD)[W]

0.15

Drive Voltage[V]

-1.2

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

1.6x1.6 (t=0.55)

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Features:

· Low voltage(1.2V) drive type
· Pch+Pch Small-signal MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
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