600V 4A TO-220FM, Low-noise Power MOSFET - R6004ENX
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
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Specifications:
Grade
Standard
Package Code
TO-220FM
Package Size[mm]
15.1x10.1 (t=4.6)
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
4.0
RDS(on)[Ω] VGS=10V(Typ.)
0.9
RDS(on)[Ω] VGS=Drive (Typ.)
0.9
Total gate charge Qg[nC]
15.0
Power Dissipation (PD)[W]
40.0
Drive Voltage[V]
10.0
Mounting Style
Leaded type
Bare Die Part Number
Available: K7411
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Features:
- Low on-resistance
- Fast switching speed
- Gate-source voltage (VGSS) guaranteed to be ±20V
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating ; RoHS compliant