RGT8NS65D(LPDS)
5µs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT
RGT8NS65D(LPDS)
5µs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
4
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
71
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
65
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x13.1 (t=4.7)
Features:
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant