RGT8NS65D(LPDS)
5µs Short-Circuit Tolerance, 650V 4A, FRD Built-in, LPDS, Field Stop Trench IGBT

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Data Sheet Buy * Sample *
* This is a standard-grade product.
For Automotive usage, please contact Sales.

Product Detail

 
Part Number | RGT8NS65DGTL
Status | Recommended
Package | LPDS
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS | Yes

Specifications:

Series

T: For inverter (tsc 5µs)

VCES [V]

650

IC(100°C)[A]

4

VCE(sat) (Typ.) [V]

1.65

tf(Typ.) [ns]

71

tsc(Min.) [us]

5

Built-in Diode

FRD

Pd [W]

65

BVCES (Min.)[V]

650

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.1x13.1 (t=4.7)

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Features:

1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
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