RGT50NS65D(TO-262)
5µs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-262, Field Stop Trench IGBT
RGT50NS65D(TO-262)
RGT50NS65D(TO-262)
5µs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-262, Field Stop Trench IGBT
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
25
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
65
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
194
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.1x9 (t=4.7)
Features:
- Low Collector-Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
