RGT50NS65D(TO-262)

5µs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-262, Field Stop Trench IGBT
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RGT50NS65D(TO-262)

RGT50NS65D(TO-262)
5µs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-262, Field Stop Trench IGBT

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
Data Sheet Buy * Sample *

Product Detail

 
Part Number | RGT50NS65DGC9
Status | Active
Package | TO-262
Packing Type | Tube
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS | Yes

Specifications:

Series

T: For inverter (tsc 5µs)

VCES [V]

650

IC(100°C)[A]

25

VCE(sat) (Typ.) [V]

1.65

tf(Typ.) [ns]

65

tsc(Min.) [us]

5

Built-in Diode

FRD

Pd [W]

194

BVCES (Min.)[V]

650

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.1x9 (t=4.7)

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Features:

  • Low Collector-Emitter Saturation Voltage
  • Low Switching Loss
  • Short Circuit Withstand Time 5µs
  • Built in Very Fast & Soft Recovery FRD (RFN-Series)
  • Pb-free Lead Plating; RoHS Compliant
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