BM3G007MUV-LB
Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC

This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.

Product Detail

 
Part Number | BM3G007MUV-LBE2
Status | Recommended
Package | VQFN046V8080
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Vin (Min.)[V]

-0.6

Vin (Max.)[V]

30

Operating Current@130 kHz(Typ) [μA]

650

Quiescent Current (Typ) [μA]

180

Switching Frequency(Max)[MHz]

2

Turn-on Delay Time(Typ)[ns]

12

Turn-off Delay Time(Typ)[ns]

15

Temperature (Min.)[°C]

-40

Temperature (Max.)[°C]

105

ON State Resistance(Typ)[mΩ]

70

Package Size [mm]

8.0x8.0 (t=1.0)

Application

Networking, Server

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Min.)[°C]

150

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Features:

  • Nano Cap™ Integrated Output Selectable 5V LDO
  • Long Time Support Product for Industrial Applications
  • Wide Operating Range for VDD Pin Voltage
  • Wide Operating Range for IN Pin Voltage
  • Low VDD Quiescent and Operating Current
  • Low Propagation Delay
  • High dv/dt Immunity
  • Adjustable Gate Drive Strength
  • Power Good Signal Output
  • VDD UVLO Protection
  • Thermal Shutdown Protection

Reference Design / Application Evaluation Kit

 
    • Evaluation Board - BM3G007MUV-EVK-003
    • The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.

  • User Guide
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