BM3G007MUV-LB
Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC
BM3G007MUV-LB
Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, GaN HEMT Power Stage IC
This is the product guarantees long time support in industrial market. BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Product Detail
Specifications:
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@130 kHz(Typ) [μA]
650
Quiescent Current (Typ) [μA]
180
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
12
Turn-off Delay Time(Typ)[ns]
15
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
70
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
Features:
- Nano Cap™ Integrated Output Selectable 5V LDO
- Long Time Support Product for Industrial Applications
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Reference Design / Application Evaluation Kit
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- Evaluation Board - BM3G007MUV-EVK-001
This evaluation board outputs an isolated voltage of 12 V from an input of 90 Vac to 264 Vac, and the maximum output current is 8.3 A. It was developed mainly as a power supply for adapters. The average efficiency is 90.7% when VIN = 230V. The BM3G007MUV is GaN HEMT (650 V 70 mΩ), with integrated driver and protection circuitry. QR controllers for AC/DC power supplies use BM1Q021FJ.
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- Evaluation Board - BM3G007MUV-EVK-003
The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
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- Evaluation Board - BM3G007MUV-EVK-002
With GaN HEMT, Power Factor Correction 240W 400V BM3G007MUV Reference Board
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