Regarding SiC products, why does the rated drain-source current differ between discrete and module devices?|FAQ|ROHM Semiconductor

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Regarding SiC products, why does the rated drain-source current differ between discrete and module devices?

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Regarding SiC products, why does the rated drain-source current differ between discrete and module devices?
- This is because the operating temperatures are different.
  For modules, the junction temperature Tj is 150°C and case temperatures Tc is 60°C, while for MOSFETs Tj is 175°C and Tc 25°C.

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