Silicon-carbide (SiC) Power Devices
Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity. The low ON resistance of SiC devices contribute to significantly lower energy consumption, allowing users to design environmentally friendly products and systems that reduce CO2 emissions.
ROHM is at the forefront in the development of SiC power devices and modules that offer improved power-savings in applications across a number of industries.
EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.
* EcoSiC™ is trademark or registered trademark of ROHM Co., Ltd.
SiC Power Devices BrochureNew TRCDRIVE pack™ with 2-in-1 SiC Molded Module
A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM's 4th Generation SiC MOSFETs with low ON resistance are built in - resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs.
* TRCDRIVE pack™ is trademark or registered trademark of ROHM Co., Ltd.
SiC Technology Applications
Case studies and projects with customers using ROHM devices are shown here.
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SiC-Related Products
ROHM is developing gate drivers optimized for driving SiC devices. Using in combination with SiC devices makes it possible to maximize characteristics. ROHM also offers ICs that integrate SiC components, such as AC/DC converter control ICs equipped with SiC MOSFETs.
