News & Topics

• Power Electronics

Presentations

• 2023/05
  Autonomous Minimization of Power Loss by Switching Frequency Adjusting Function for a DC–DC Converter

• AI

Presentations

• 2022/12
  Principal Component Analysis based GaN transistor live health monitoring

• NoMaDbot™　–No Map Driving Robot-

• Power Electronics

Presentations

• 2022/12
  A Secondary-Side Resonant LLC converter for Reducing Resonance Voltage with Boost Mode Operation Using Resonance Including Current Doubler Rectifier
• 2022/12
  Research on the correlation between power devices and power systems

• Power Electronics

Presentations

• 2022/11
  Nine Point Bending Test Technique for Evaluating the Sintered Silver Die Degradation
• 2022/12
  Sintered Silver Degradation Assessment by Thermal and Mechanical Cyclic Tests
• 2023/01
  SiC wafer cost reduction with remote epitaxy technology

• Power Electronics

Presentations

• Sintered Silver Die Degradation Evaluation by Nine Point Bending Test Technique
• Control of current distribution for enhanced robustness of single-mode oscillation in a photonic-crystal surface-emitting laser
• Evaluating Sintered Silver Die-attach Thermal Cycling Degradation
• Degradation Mechanism Comparison of Sintered Silver Die in Thermal and Mechanical Cycling Tests

• Sensor Technology​​

Presentations

• THz imaging system with a single resonant tunneling diode transceiver in the 300-GHz band
• Size Reduction in Imaging System Using a Single Resonant Tunneling Diode Transceiver

• Power Electronics

Publications

• Evaluation of Thermal Couple Impedance Model of Power Modules for Accurate Die Temperature Estimation up to 200℃
• An evaluation of a new type of High Efficiency Hybrid Gate Drive Circuit for SiC- MOSFET suitable for Automotive Power Electronics System Applications

Presentations

• 自動車用パワーエレクトロニクスの現状と動向
• Auto Structural Optimization of Toroidal Coils Based on Neural Network and Genetic Algorithm
• LPCVD SiN Film Breakdown and N2-anneal Temperature (Ⅰ) TDDB and ESR Evaluations
• LPCVD SiN Film Breakdown and N2-anneal Temperature (Ⅱ) ESR and FTIR Evaluations
• Effect of N2-Anneal Temperature on Silicon Nitride film:(Ⅰ) Time-Dependent Dielectric Breakdown and ESR Evaluations
• Effect of N2-Anneal Temperature on Silicon Nitride film:(Ⅱ) Fine Structures of ESR Spectrum and FTIR
• Effects of Underside-Si Annealing on Charge Breakdown of LPCVD SiN Film

• Sensor Technology​​

Presentations

• Oxygen and humidity sensing property of a limiting current-type thin-film YSZ-based sensor on a micro-hotplate
• Compact and cost-effective solution for terahertz applications