BM2SCQ122T-LBZ
Quasi-resonant AC/DC Converter with Built-in 1700 V SiC-MOSFET
BM2SCQ122T-LBZ
Quasi-resonant AC/DC Converter with Built-in 1700 V SiC-MOSFET
BM2SCQ122T-LBZ is a quasi-resonant AC/DC converter that provides an optimum system for all products which has an electrical outlet. Quasi-resonant operation enables soft switching and helps to keep the EMI low. This IC can be designed easily because it includes the 1700 V/4 A SiC (Silicon-Carbide) MOSFET. Design with a high degree of flexibility is achieved with current detection resistors as external devices. The burst operation reduces an input power at light load. It includes various protection functions, such as soft start function, burst operation, over current limiter per cycle, over-voltage protection function, overload protection function.
You can choose from a variety of power and topology evaluation boards.
Product Detail
Specifications:
AC Monitor Function
No
BR UVLO
No
Current Detection Resistors
External
Dynamic Over Current Detection
No
External LATCH Function
No
FB OLP
Latch
Frequency Reduction Function
Yes
Over Current Detection Voltage (typ.)[V]
0.7
VH Terminal UVLO
No
ZT OVP
Latch
FET
SiC-MOSFET Integrated
Controller Type
QR
Vin1(Min.)[V]
15
Vin1(Max.)[V]
27.5
Withstand Voltage [V]
1700
SW Frequency (Max.)[kHz]
120
VCC OVP
Latch
BR PIN
No
On Resistor (MOSFET)[Ω]
1.12
Channel
1
Light Load mode
Yes
EN
No
Soft Start
Yes
Thermal Shut-down
Yes
Under Voltage Lock Out
Yes
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
105
Package Size [mm]
10x15 (t=4.7)
Features:
- Long Time Support Product for Industrial Applications
- 6 Pins: TO220-6M Package
- Built-in 1700 V/4 A/1.2 Ω SiC-MOSFET
- Quasi-resonant Type (Low EMI)
- Frequency Reduction Function
- Low Current Consumption (19 μA) during Standby
- Burst Operation at Light Load
- SOURCE Pin Leading Edge Blanking
- VCC UVLO (Under Voltage Drop Out protection)
- VCC OVP (Over Voltage Protection)
- Over Current Protection Circuit per Cycle
- Soft Start Function
- ZT Pin Trigger Mask Function
- ZT OVP (Over Voltage Protection)
Supporting Information
Overview
The BM2SCQ12xT-LBZ series integrate 1700V SiC MOSFET, which is also an industry first. This series enables breakthrough energy savings and facilitates efficient AC/DC converter design by resolving many of the issues encountered by designers using discrete solutions. Incorporating a SiC MOSFET and control circuitry optimized for auxiliary power supplies for industrial equipment in a single package significantly reduces the number of parts required when compared to the conventional designs (from 12pcs plus heat sink to a single IC). It also aids to minimizing both the component failure risk and the amount of resources required to develop systems using SiC MOSFETs. In addition, this product enables the improvement of power efficiency by 5% (and decreasing power loss by 28%). These features translate to dramatic reduction in size, improved reliability, and superior power savings in industrial applications.
ROHM is committed to developing not only power semiconductors such as SiC devices but also the ICs for controlling them, and to providing optimized solutions that contribute to greater energy savings and performance in industrial equipment.
Key Features
1. Breakthrough miniaturization is enabled by replacing 12 components and heat sink with a single package
ROHM’s latest products replace up to 12 components (AC/DC converter IC, 800V Si MOSFET x 2, Zener diode x 3, resistor x 6) and the heat sink with a single package, dramatically reducing the number of external parts required. In addition, the high withstand voltage and voltage noise resistance of the internal SiC MOSFET make it possible to reduce the size of components used for noise suppression./p>
2. Development resources and design risks are reduced while providing multiple built-in protection functions that enable superior reliability
The monolithic design reduces the resources required for component selection and reliability evaluation for the clamp and drive circuits while also minimizing component failure risk and simplifying the development effort for SiC MOSFET adoption. In addition, overload protection (FB OLP), overvoltage protection (VCC OVP) of the supply voltage pin, and a high accuracy thermal shutdown function (TSD) (achieved through the built-in SiC MOSFETs) are built in, along with the over current protection and secondary overvoltage protection functions. This enables the incorporation of multiple protection circuits for industrial power supplies that require continuous operation hence leading to a significant improvement in system reliability.
3. SiC MOSFET performance is optimized to achieve dramatically improved power savings
Both internal SiC MOSFET and the built-in gate driver circuit optimized for this SiC MOSFET improve efficiency by as much as 5% over conventional Si MOSFETs (ROHM April 2018 study). Also, a quasi-resonant method is adopted for the control circuit that enables operation at higher efficiency and lower noise than conventional PWM systems, minimizing the effects of noise in industrial equipment.
Anwendungsbeispiele
・General-purpose inverters
・AC servos
・PLCs (Programmable Logic Controllers)
・Manufacturing equipment
・Robots
・Industrial lighting (i.e. street lamps)
Optimized for auxiliary power supply circuits in 400VAC industrial equipment/p>
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