YQ40NL10CDFH (Under Development)

Trench MOS Structure, 100V, 40A, LPDL, Highly Efficient SBD for Automotive
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YQ40NL10CDFH
(Under Development)

YQ40NL10CDFH (Under Development)
Trench MOS Structure, 100V, 40A, LPDL, Highly Efficient SBD for Automotive

The YQ40NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

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Product Detail

 
Part Number | YQ40NL10CDFHTL
Package | LPDL (TO-263L)
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS | Yes

Specifications:

Configuration

C-Common

Package Code

TO-263 (D2PAK)

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

40

IFSM[A]

150

Forward Voltage VF(Max.)[V]

0.72

IF @ Forward Voltage [A]

20

Reverse Current IR(Max.)[mA]

0.16

VR @ Reverse Current[V]

100

Tj[℃]

150

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

15.1x10.1 (t=4.7)

Common Standard

AEC-Q101 (Automotive Grade)

Find Similar

Features:

  • High reliability
  • Power mold type
  • Cathode common dual type
  • Low VF and low IR
  • Low capacitance

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YQ40NL10CD   Grade| Standard Status| Under Development

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