High Efficiency Schottky Barrier Diodes
ROHM RSX and RBLQ series are high efficiency Schottky barrier diodes that improve the trade-off between low VF and low IR. As such, these series, which combine stable operation at high temperatures with low power consumption, have been well-received in the industry that demands high efficiency, low loss, and high reliability.
Videos & Catalogs
Videos
ROHM Si Power Diodes: A Comprehensive Lineup of Performance and Package Options - Si power diodes Best Selection
2025-05-14 00:00:00.0
( 4.11 MB )
ROHM's Si power diodes have gained widespread adoption for their consistent quality and extensive lineup that allows for optimal product selection tailored to specific application and package needs. Backed by a strong commitment to technology and quality, ROHM's manufacturing system delivers reliable performance across a broad spectrum of applications, including automotive, industrial, and consumer devices.
ROHM's Si power diodes have gained widespread adoption for their consistent quality and extensive lineup that allows for optimal product selection tailored to specific application and package needs. Backed by a strong commitment to technology and quality, ROHM's manufacturing system delivers reliable performance across a broad spectrum of applications, including automotive, industrial, and consumer devices.
Videos
Trench MOS Type High Efficiency SBDs YQ Series
2024-02-14 00:00:00.0
( 2:54 )
The YQ series utilizes an original trench MOS structure. A lower VF and a lower IR can be achieved at the same time.
The YQ series utilizes an original trench MOS structure. A lower VF and a lower IR can be achieved at the same time.
Videos
100V Withstand High Performance Schottky Barrier Diodes - YQ series
2024-01-22 00:00:00.0
( 1.38 MB )
The YQ series of Schottky barrier diodes adopt an original trench MOS structure that reduces both VF and IR compared with conventional planar-type products. This minimizes switching loss along with the risk of thermal runaway, contributing to lower application power consumption.
The YQ series of Schottky barrier diodes adopt an original trench MOS structure that reduces both VF and IR compared with conventional planar-type products. This minimizes switching loss along with the risk of thermal runaway, contributing to lower application power consumption.
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