ROHM News Detail

Mass Produced Product: "Full SiC" Power Modules Page

Electronics Fundamentals
SiC Power Module Features

Overview

Full-SiC power module integrating SiC MOSFETs and SBDs^*1.
An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC power modules. These new modules integrate SiC SBDs and MOSFETs, making high frequency operation above 100kHz possible (unlike conventional products). In addition,high-speed switching, combined with low-loss performance, make them ideal as replacements for 200-400A Si IGBTs.

Full SiC Power Module

Key Features: Switching loss reduced by more than 80%

Full SiC power modules maximize high-speed performance. The result is signiﬁcantly reduced switching loss compared with conventional Si IGBTs.

Features

High-speed switching
Low switching loss
High-speed recovery
Low inductance design

Enables Low Loss Even During High-Speed Switching Operation

Circuit diagram

Lineup

MAXIMUM RATING (Tj=25ºC)

Part No.	Absolute Maximum Ratings(Ta=25°C)					R_DS (ON) (mΩ)	Paclage	Thermistor	Internal Circuit Diagram
Part No.	V_DS (V)	I_D (A) (Tc= 60°C)	Tj (°C)	Tstg (°C)	Visol (V) (AC 1min.)	R_DS (ON) (mΩ)	Paclage	Thermistor	Internal Circuit Diagram
NEW BSM080D12P2C008 (2G. DMOS)	1200	80	-40 to +175	-40 to +125	2500	34	C type	-
BSM120D12P2C005 (2G. DMOS)		120	-40 to +150			20
NEW BSM180D12P3C007 (3G.UMOS -Trench Gate)		180	-40 to +175			10
NEW BSM300D12P2E001 (2G. DMOS)		300	-40 to +175			7.3	E type	○

■External Dimensions

Evaluation boards

Gate drive circuit boards to drive Full SiC Power modules are available for evaluation purpose.
Feature:

Built in miller clamp function
Compatible with gate bias of both 0V to +18V and -3V to +18V.
(Removal and replacement of several components are required.)

P/N	BW9499H -EVK-01	BW9499H -EVK-02	BW9499H -EVK-03	BP59A8H -EVK-01	BP59A8H -EVK-02
SiC Module	BSM180D12P3C007	BSM080D12P2C008 BSM120D12P2C005		BSM300D12P2E001
SiC Module
Appearance
Gate Drive IC	BM6101FV-C
R_G ON	6.8Ω	2.2Ω		0.01Ω
R_G OFF	8.2Ω	3.9Ω		0.2Ω
C_GS	-	5.6nF		5.6nF
Gate Turn Off	Minus	Zero	Minus	Zero	Minus
Recommended V_GS	+18V / -2V	+18V / 0V	+18V / -3V	+18V / 0V	+18V / -3V

Please contact us if you need further information

Applications

High voltage motor drives
Inverters, Converters for Industrial equipment, e-mobilities (EV, HEV, train, e-bike etc.).
Solar/wind power generation, power supply unit, induction heating equipment

And more

Future developments
Our lineup has been expanded to include a new model that achieves higher rated current through the use of an SiC device that adopts a trench structure and a high voltage module.

Full SiC Power Module