SiC SBDs | SiC | New product new technology

Products

SiC Schottky barrier diodes are now available for high voltage resistance, large current circuits. High-speed switching characteristics minimize switching loss, improving device operating frequency.

Features

Short recovery time
Supports high-speed switching
Low temperature dependence

Key Ratings

Rated Voltage	Rated Current
600V	10A

Key Feature 1 : Dramatically lower switching loss

Ultra-short reverse recovery time (impossible to achieve with silicon) enables high-speed switching. This minimizes the reverse recovery charge (Qrr), reducing switching loss significantly, contributing to end-product miniaturization.

In addition, SiC devices maintain a constant trr regardless of temperature, unlike conventional silicon fast recovery diodes where the trr increases with temperature.
This enables high-temperature driving without increasing switching loss.

Key Feature 2 : Stable temperature characteristics

SiC diodes exhibit stabler temperature characteristics (i.e. forward voltage) compared with silicon-based devices, simplifying parallel connection(s) and preventing thermal runaway - unlike Si FRDs.

Applications

Switching circuits
Motor drive circuits
PFC (Power Factor Correction) circuits and others

Key Feature 3 : Complete Manufacturing Process from development to production

SiC wafer supplier SiCrystal has joined the ROHM Group. This makes it possible to perform manufacturing completely in-house, from ingot formation to power device fabrication, resulting in cutting-edge products with superior reliability and quality.