ROHM SiC Power Modules

Overview

Full-SiC power module integrating SiC MOSFETs and SBDs An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC power modules. These new modules integrate SiC SBDs and MOSFETs, making high frequency operation above 100kHz possible (unlike conventional products).

Full SiC Power Module

Key Features: Switching loss reduced by more than 80%

Full SiC power modules maximize high-speed performance. The result is significantly reduced switching loss compared with conventional Si IGBTs.

Features

  • High-speed switching
  • Low switching loss
  • High-speed recovery
  • Low inductance design

Enables Low Loss Even During High-Speed Switching Operation
Enables Low Loss Even During High-Speed Switching Operation

Circuit diagram

circuit diagram

Lineup

Part No. Absolute Maximum Ratings Inductance(nH) Package Ther mistor Internal Circuit Diagram
VDSS
(V)
VGS
(V)
ID (A)
[Tc=
60°C]
Tj max
(°C)
Tstg
(°C)
Visol
(V)
[AC
1min.]
BSM080D12P2C008 1200 -6
~22
80 175 -40
~
125
2500 25 C type
45.6
×
122
×
17mm
- Circuit diagram
BSM120D12P2C005 120
BSM180D12P3C007 -4
~22
180
BSM180D12P2E002 -6
~22
180 13 E Type
62
×
152
×
17mm
Circuit diagram
BSM300D12P2E001 300
※2 BSM400D12P3G002 -4
~22
400 10 G Type
62
×
152
×
17mm
※2 BSM600D12P3G001 600

※1Chopper types also offered. Please contact a ROHM sales office for details.
※2 Under Development

■External Dimensions

External Dimensions

Evaluation boards

Gate drive circuit boards to drive Full SiC Power modules are available for evaluation purpose.

Feature:

  • Built in miller clamp function
  • Compatible with gate bias of both 0V to +18V and -3V to +18V.
    (Removal and replacement of several components are required.)
P/N BW9499H-EVK-01 BW9499H-EVK-02 BW9499H-EVK-03 BP59A8H-EVK-01 BP59A8H-EVK-02 BP59A8H-EVK-03 BP59A8H-EVK-04
SiC
Module
BSM180D12P3C007 BSM080D12P2C008
BSM120D12P2C005
BSM300D12P2E001 BSM600D12
P3G001
BSM400D12
P3G002
Appea
rance
Gate Drive IC BM6101FV-C
RG ON 6.8Ω 2.2Ω 0.01Ω 1.8Ω 2.2Ω
RG OFF 8.2Ω 3.9Ω 0.2Ω 1.8Ω 2.2Ω
CGS - 5.6nF 5.6nF - -
Gate Turn Off Minus Zero Minus Zero Minus Minus Minus
Recom
mended VGS
+18V / -2V +18V / 0V +18V / -3V +18V / 0V +18V / -3V +18V / -2V +18V / -2V

Under Development

Please contact us if you need further information

Applications

  • High voltage motor drives
  • Inverters, Converters for Industrial equipment, EV station
  • Solar/wind power generation, power supply unit, induction heating equipment