Not Recommended for New Designs
SCS220KN
1200V, 20A, SMD, Silicon-carbide (SiC) SBD
SCS220KN
Not Recommended for New Designs
SCS220KN
1200V, 20A, SMD, Silicon-carbide (SiC) SBD
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Part Number | SCS220KNTRL
Status |
Not Recommended for New Designs
Package |
TO-263-2L
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS |
Yes
Specifications:
Grade
Standard
Reverse Voltage[V]
1200
Continuous Forward Current[A]
20
Generation
2nd Gen
Total Power Dissipation[W]
272
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
Features:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- Wide creepage distance = min. 5.10mm
Videos & Catalogs
Videos
Wide Creepage Distance Package SiC Schottky Barrier Diodes - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.09 MB )
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.