SCZ4006KTA (New)
DOT-247 (2-in-1), 1200V, 209A, Half-bridge, SiC Power Module
SCZ4006KTA (New)
DOT-247 (2-in-1), 1200V, 209A, Half-bridge, SiC Power Module
SCZ4006KTA is a 1200V rated SiC molded module. DOT-247 features a form that joins two discrete TO-247 packages, enabling a high power density. Its 2-in-1 configuration makes it applicable to a wide range of circuit topologies; with two topology options—half-bridge and common-source—it also supports multilevel circuits such as 3-level NPC, 3-level T-NPC and 5-level ANPC.
DOT-247 is ideal for industrial equipment such as PV inverters, UPS systems, and semiconductor relays.
Product Detail
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
209
Total Power Dissipation[W]
704
Drain-source On-state Resistance(Typ.)[mΩ]
6
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-Bridge
Package Size [mm]
26.45x31.5 (t=5.25)
Features:
- DOT247 package with the 4th Generation SiC-MOSFET
- VDSS = 1200V
- Low RDS(on)
- High-speed switching possible
- Low switching losses
- Tvjmax = 175°C
- Compact design
- High power density
Reference Design / Application Evaluation Kit
-
- Evaluation Board - SCZ4006KTAC23-EVK-A13
This document outlines the design, implementation, and performance analysis of a three-phase inverter system utilizing 1200V Silicon Carbide (SiC) MOSFETs, tailored for demanding applications such as photovoltaic (PV) inverters, uninterruptible power supplies (UPS), motor drives, switch-mode power supplies (SMPS), servers, and other industrial-grade applications.
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