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Silicon carbide Power Module - BSM600D12P3G001

BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | BSM600D12P3G001
Status | Active
Package | G
Unit Quantity | 4
Minimum Package Quantity | 4
Packing Type | Corrugated Cardboard
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

576.0

Total Power Dissipation[W]

2450

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.