Silicon carbide Power Module - BSM600D12P3G001 | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
Silicon carbide Power Module - BSM600D12P3G001
BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
576.0
Total Power Dissipation[W]
2450
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.