BSM180C12P2E202

1200V, 204A, Chopper, Silicon-carbide (SiC) Power Module
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BSM180C12P2E202

BSM180C12P2E202
1200V, 204A, Chopper, Silicon-carbide (SiC) Power Module

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.

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* This is a standard-grade product.
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Product Detail

 
Part Number | BSM180C12P2E202
Status | Recommended
Package | E Type
Packing Type | Corrugated Cardboard
Unit Quantity | 4
Minimum Package Quantity | 4
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

204

Total Power Dissipation[W]

1360

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Chopper

Package Size [mm]

152.0x62.0 (t=18.0)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD2G12D24-EVK001

    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

Design Resources

 
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Videos & Catalogs

 

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Videos
Compact Molded Modules with Built-in SiC MOSFETs (HSDIP20) - BSTxxx1P4K01, BSTxxx2P4K01
2025-04-24 00:00:00.0 ( 1.79 MB )
The BSTxxx1P4K01 (750V) and BSTxxx2P4K01 (1,200V) are molded-type modules that incorporate four and six SiC MOSFETs, respectively. All essential circuits required for power conversion in high-power applications are integrated into a compact module package, contributing to end-product miniaturization.
The BSTxxx1P4K01 (750V) and BSTxxx2P4K01 (1,200V) are molded-type modules that incorporate four and six SiC MOSFETs, respectively. All essential circuits required for power conversion in high-power applications are integrated into a compact module package, contributing to end-product miniaturization.

Videos
X-in-1 HSDIP20 SiC Modules
2025-04-24 00:00:00.0 ( 3:13 )
Integrating ROHM SiC MOSFETs, which combine low ON resistance with high-speed switching, into the HSDIP20 package, results in industry-leading current density that enables fast charging.
Integrating ROHM SiC MOSFETs, which combine low ON resistance with high-speed switching, into the HSDIP20 package, results in industry-leading current density that enables fast charging.

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Videos
Molded Power Modules for Traction Inverter Drive TRCDRIVE pack™ - BSTxxxD12P4Axxx, BSTxxxxD08P4Axxx
2024-06-10 00:00:00.0 ( 1.13 MB )
Power module with ultra-high current density and compact easy-to-mount single-sided high heat dissipation molded package.
Power module with ultra-high current density and compact easy-to-mount single-sided high heat dissipation molded package.
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