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Silicon carbide Power Module - BSM080D12P2C008

BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | BSM080D12P2C008
Status | Active
Package | C
Unit Quantity | 12
Minimum Package Quantity | 12
Packing Type | Tray
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

80.0

Total Power Dissipation[W]

600

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.