Silicon carbide Power Module - BSM080D12P2C008 | ROHM Semiconductor - ROHM Co., Ltd. - global
Rohm Productdetail
Silicon carbide Power Module - BSM080D12P2C008
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
×
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
80.0
Total Power Dissipation[W]
600
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.