BSM080D12P2C008
1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module
BSM080D12P2C008
BSM080D12P2C008
1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | BSM080D12P2C008
Status |
Recommended
Package |
C
Unit Quantity | 12
Minimum Package Quantity | 12
Packing Type | Corrugated Cardboard
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
1200
Drain Current[A]
80
Total Power Dissipation[W]
600
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
122x45.6 (t=17.5)
Features:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Evaluation
Board
-
- Drive Board
- AgileSwitch 2ASC-12A1HP / EDCA2
BSM series (1200V, C type)
Core Driver : 2ASC-12A1HP
Adapter Board : EDCA2
-
- Drive Board
- BSMGD3C12D24-EVK001
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module
- MGSM1D72J2-145MH26
BSM series (1200V, C type)
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- Drive Board
- TAMURA 2DU series
For BSM series (1200V, C / E / G type)