SCT4065DE (New)
750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4065DE (New)
750V, 25A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4065DE is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Product Detail
Specifications:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
65
Generation
4th Gen (Trench)
Drain Current[A]
25
Total Power Dissipation[W]
88
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
