SCT4036KTW (New)
1200V, 41A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

This product is a SiC MOSFET in the TSC3PAK package. Featuring a top-side heat dissipation structure with the heat dissipation surface located on the top of the package, TSC3PAK achieves heat dissipation performance comparable to conventional through-hole packages while maintaining a surface-mount design. In addition, ROHM’s proprietary groove structure secures a creepage distance of 6.66mm, enabling support for an AC peak voltage of 1200V in Pollution Degree 2 environments. This contributes to safe insulation design and higher reliability in high-voltage applications. Furthermore, the product achieves low ON resistance and high-speed switching, contributing to greater efficiency and lower power consumption in power conversion circuits. It is ideal for onboard chargers and electric compressors in xEVs, as well as PV inverters and server power supplies.