1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3160KL
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For Automotive usage, please contact Sales.
Drain-source On-state Resistance(Typ.)[mΩ]
Total Power Dissipation[W]
Storage Temperature (Min.)[℃]
Storage Temperature (Max.)[℃]
Features:・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant