SCT3060ALHR - Documentation

AEC-Q101 qualified automotive grade product. SCT3060ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

White Paper

Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
 
In recent years, the advancing digitization of applications is expanding the number and role of electronic circuits, resulting in a considerable amount of man-hours spent on circuit design, from component selection during application development to board design and evaluation. This document discribes the solution for solving customer issues for each design flow with ROHM's support and tools.
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
 
Leadrive Technology Co., Ltd. is a high-tech company focusing on R&D, manufacturing and sales of new electric vehicles powertrain and power semiconductor modules. This paper will introduce the design, testing and system evaluation of SiC power modules, which were all performed by Leadrive.
Solving the challenges of driving SiC MOSFETs with new packaging developments
 
With the packaging innovation of adding a separate driver source pin and isolated gate driver ICs for driving the SiC MOSFET gates,  designers can take full advantage of the SiC MOSFET benefits in their designs.

Application Note

Part Explanation
 
For SiC MOSFET
Calculating Power Loss from Measured Waveforms
 
This application note describes how to calculate the power loss of a SiC MOSFET from measured switching waveforms in a switching circuit with a SiC MOSFET
Calculation of Power Dissipation in Switching Circuit
 
This application note describes how to calculate the power dissipation that occurs in a SiC MOSFET in a switching circuit with the SiC MOSFET during switching operations.
Notes for Temperature Measurement Using Thermocouples
 
This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Two-Resistor Model for Thermal Simulation
 
This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools.
Notes for Temperature Measurement Using Forward Voltage of PN Junction
 
This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
What is a Thermal Model? (SiC Power Device)
 
Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models.
How to Use Thermal Models
 
This application note explains that how to get and use the thermal models, and the simulation method.
Method for Monitoring Switching Waveform
 
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Precautions during gate-source voltage measurement for SiC MOSFET
 
SiC MOSFET has relatively huge current and voltage change during switching operation, therefore it is needed to measure precisely for surge in between Gate and Source terminal. This application note will explain the precautions, general measurement method, connecting probes, selecting the measurement point and precaution with bridge configuration during the gate - source voltage measurement.
Snubber circuit design methods for SiC MOSFET
 
This application note illustrates a way to design snubber circuit, which is one of the methods to suppress surges voltages and currents.
Gate-source voltage behaviour in a bridge configuration
 
In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail.
Gate-Source Voltage Surge Suppression Methods
 
This application note aims to present the best countermeasures while clarifying the causes of the surge that occurs between gate and source of the MOSFET.
Application Note for SiC Power Devices and Modules
 
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Measurement Method and Usage of Thermal Resistance RthJC
 
This application note describes how to measure and use the junction-to-case thermal resistance of a discrete semiconductor device.
Importance of Probe Calibration When Measuring Power: Deskew
 
Even when devices used for measurement are calibrated regularly, they will give incorrect results if calibration is not perfo rmed for the measurement environment. This application note explains the importance of probe calibration in power measurement environments.
Impedance Characteristics of Bypass Capacitor
 
This application note focuses on the impedance characteristics of capacitors, and explains cautions for selecting bypass capacitors.
Precautions When Measuring the Rear of the Package with a Thermocouple
 
This application note describes precautions when measuring the temperature on the rear of a package using a thermocouple to find the junction temperature of a semiconductor chip during actual operation.